Home Tag "Alta Devices raises its GaAs single-junction solar cell efficiency world record to 28.9%"

Alta Devices raises its GaAs single-junction solar cell efficiency world record to 28.9%

The US National Renewable Energy Laboratory (NREL) has certified that Alta Devices of Sunnyvale, CA, USA (a subsidiary of Hanergy Thin Film Power Group Ltd of Beijing, China since 2014) has raised its own world record for gallium arsenide (GaAs) single-junction solar cell energy conversion efficiency from 28.8% to 28.9%. “Alta Devices goal is to […]