Odisha Supports ₹618 Crore Silicon Carbide Semiconductor Plant, a First for India – EQ
In Short : Odisha has approved fiscal support for RIR Power Electronics’ ₹618 crore Silicon Carbide semiconductor project in Bhubaneswar. As India’s first such facility, it will produce high-voltage SiC components for EVs, renewable energy, and industrial applications. The project is expected to create around 750 jobs, boost domestic manufacturing, and strengthen the state’s electronics and clean technology ecosystem.
In Detail : Odisha has extended fiscal support to RIR Power Electronics Limited for its ₹618 crore Silicon Carbide semiconductor manufacturing project in Bhubaneswar.
The assistance will be provided under the state’s Electronics and IT Department policy, with capital subsidy facilitated by the Odisha Computer Application Centre (OCAC).
This project marks the establishment of India’s first Silicon Carbide semiconductor fabrication facility, positioning Odisha as a pioneer in advanced electronics manufacturing.
The plant will produce high-voltage SiC components, which are essential for electric vehicles, renewable energy systems, industrial automation, and power electronics.
By focusing on Silicon Carbide technology, the facility will enable the production of energy-efficient and high-performance components, reducing dependence on imports.
The project is expected to create around 750 direct and indirect jobs, contributing significantly to local employment and skill development.
Officials believe the facility will attract further investments in the state’s electronics and clean technology sectors, strengthening its industrial ecosystem.
The initiative aligns with India’s vision to build a robust semiconductor manufacturing base and support emerging sectors like e-mobility and green energy.
With state backing, RIR Power Electronics aims to complete Phase 1 of the project efficiently, setting a strong foundation for future expansions.
